TECHNOLOGY AND PHOTOLUMINESCENCE OF GAAS MICROCRYSTALLITES AND NANOCRYSTALLITES

被引:3
作者
JUEN, S
UBERBACHER, K
BALDAUF, J
LAMPRECHT, KF
TESSADRI, R
LACKNER, R
HOPFEL, RA
机构
[1] UNIV INNSBRUCK,INST MINERAL & PETROG,A-6020 INNSBRUCK,AUSTRIA
[2] UNIV INNSBRUCK,INST ZOOPHYSIOL,A-6020 INNSBRUCK,AUSTRIA
基金
奥地利科学基金会;
关键词
D O I
10.1016/0749-6036(92)90248-4
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A new method for the production and separation of semiconductor micro- and nanocrystallites is reported. We obtain suspensions with crystallites in a size range from several micrometers down to tens of nanometers by wet micromilling of monocrystalline bulk material. Gradient sedimentation and centrifugation are applied to extract fractions containing particles of a narrow size distribution. Photoluminescence spectra of GaAs microcrystallites deposited on Si substrates show a size dependent, unexpectedly strong blue-shift of up to 30 meV. We discuss the observed shift on the basis of surface stress and quantum confinement. © 1992.
引用
收藏
页码:181 / 184
页数:4
相关论文
共 15 条
[1]   ELECTRONIC-STRUCTURE AND PHOTOEXCITED-CARRIER DYNAMICS IN NANOMETER-SIZE CDSE CLUSTERS [J].
BAWENDI, MG ;
WILSON, WL ;
ROTHBERG, L ;
CARROLL, PJ ;
JEDJU, TM ;
STEIGERWALD, ML ;
BRUS, LE .
PHYSICAL REVIEW LETTERS, 1990, 65 (13) :1623-1626
[2]   OPTICALLY DETECTED CARRIER CONFINEMENT TO ONE AND ZERO DIMENSION IN GAAS QUANTUM-WELL WIRES AND BOXES [J].
CIBERT, J ;
PETROFF, PM ;
DOLAN, GJ ;
PEARTON, SJ ;
GOSSARD, AC ;
ENGLISH, JH .
APPLIED PHYSICS LETTERS, 1986, 49 (19) :1275-1277
[3]  
FORCHEL A, 1988, ADV SOLID STATE PHYS, V28, P99
[4]   VERY LARGE OPTICAL NONLINEARITY OF SEMICONDUCTOR MICROCRYSTALLITES [J].
HANAMURA, E .
PHYSICAL REVIEW B, 1988, 37 (03) :1273-1279
[5]   RAMAN-SCATTERING FROM THE SURFACE PHONON MODE IN GAP MICRO-CRYSTALS [J].
HAYASHI, S ;
KANAMORI, H .
PHYSICAL REVIEW B, 1982, 26 (12) :7079-7082
[6]  
HOPFEL RA, 1989, APPL PHYS LETT, V55, P460, DOI 10.1063/1.101852
[7]  
HOPFEL RA, 1989, SPECTROSCOPY SEMICON, P650
[8]  
JUEN S, UNPUB
[9]   OPTICAL SPECTROSCOPY OF ULTRASMALL STRUCTURES ETCHED FROM QUANTUM-WELLS [J].
KASH, K ;
SCHERER, A ;
WORLOCK, JM ;
CRAIGHEAD, HG ;
TAMARGO, MC .
APPLIED PHYSICS LETTERS, 1986, 49 (16) :1043-1045
[10]   THE SURFACE-ENERGY OF SI, GAAS, AND GAP [J].
MESSMER, C ;
BILELLO, JC .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4623-4629