FAULT-FREE SILICON AT THE SILICON-SAPPHIRE INTERFACE

被引：38

作者：

PONCE, FA

机构：

来源：

关键词：

D O I：

10.1063/1.93531

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：371 / 373

页数：3

共 9 条

[1] CROSS-SECTIONAL ELECTRON-MICROSCOPY OF SILICON ON SAPPHIRE [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

[2] MISFIT DISLOCATIONS IN HETEROEPITAXIAL SI ON SAPPHIRE [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ ;

CORBOY, JF ;

CULLEN, GW .

[3]

CAREY KW, 1981, THESIS STANFORD U, pCH4

HAMARTHIBAULT, S ;

TRILHE, J .

[5]

OLSON GB, 1979, ACTA METALL MATER, V27, P1907, DOI 10.1016/0001-6160(79)90081-6

[6]

PAULING L, 1960, NATURE CHEM BOND, P546

PETROFF, PM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :973-978

[8]

Ponce F. A., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P285

PONCE, FA ;

ARANOVICH, J .