DEGRADATION MECHANISM OF TI/AU AND TI/PD/AU GATE METALLIZATIONS IN GAAS-MESFETS

被引：13

作者：

DONZELLI, G ^{[1
]}

PACCAGNELLA, A ^{[1
]}

机构：

[1] UNIV PADUA,DEPT PHYS,I-35100 PADUA,ITALY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 05期

关键词：

D O I：

10.1109/T-ED.1987.23030

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：957 / 960

页数：4

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[7] INTERLAYER DIFFUSION PHENOMENA IN TI-AU METALLIZATIONS ON N-TYPE GAAS AT 250 DEGREESC TO 450 DEGREESC [J].

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