ON PROBLEM OF DOPING SEMICONDUCTING OXIDES

被引:11
作者
FISHER, B
WAGNER, JB
机构
来源
PHYSICS LETTERS | 1966年 / 21卷 / 06期
关键词
D O I
10.1016/0031-9163(66)90087-4
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:606 / &
相关论文
共 8 条
[1]   ELECTRICAL PROPERTIES OF NONSTOICHIOMETRIC SEMICONDUCTORS [J].
BECKER, JH ;
FREDERIS.HP .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (01) :447-&
[2]   HALL EFFECT BETWEEN 300 DEGREES K AND 1100 DEGREES K IN NIO [J].
BOSMAN, AJ ;
VANDAAL, HJ ;
KNUVERS, GF .
PHYSICS LETTERS, 1965, 19 (05) :372-&
[3]  
EROR NG, 1965, THESIS NORTHWESTERN
[4]   ELECTRICAL PROPERTIES OF COBALT MONOXIDE [J].
FISHER, B ;
TANNHAUSER, DS .
JOURNAL OF CHEMICAL PHYSICS, 1966, 44 (04) :1663-+
[5]   MECHANISM OF CONDUCTION IN LI-SUBSTITUTED TRANSITION METAL OXIDES [J].
HEIKES, RR ;
JOHNSTON, WD .
JOURNAL OF CHEMICAL PHYSICS, 1957, 26 (03) :582-587
[6]  
KROGER FA, 1956, SOLID STATE PHYS, V3, P310
[7]   ELECTRICAL MEASUREMENTS ON COO AND NIO SINGLE CRYSTALS [J].
ROILOS, M ;
NAGELS, P .
SOLID STATE COMMUNICATIONS, 1964, 2 (09) :285-290
[8]  
SEITZ F, 1956, SOLID STATE PHYS, V3, P310