FURTHER IMPROVEMENTS IN END-POINT DETECTION USING A WIDE ANGLE ION-BEAM SOURCE

被引：2

作者：

DEAN, AB ^{[1
]}

HEATH, M ^{[1
]}

BRAYFORD, M ^{[1
]}

机构：

[1] VSW,MANCHESTER M16 0JT,ENGLAND

来源：

VACUUM | 1988年 / 38卷 / 06期

关键词：

VACUUM TECHNOLOGY - Applications;

D O I：

10.1016/0042-207X(88)90596-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the fabrication of multilayer or hybrid semiconductor devices, it is often necessary for connections to be made vertically through the structure to predetermined depths and at precise locations on the device. This paper outlines the improvements in end point detection resolution that can now be achieved with the development of an axial filter and the inclusion of a particle counter to increase sensitivity.

引用

页码：499 / 502

页数：4