ROOM-TEMPERATURE RESONANT MULTIPHOTONIC OPTICAL-PUMPING INDUCED BY 10.6-MU-M LASER-RADIATION IN REVERSE-BIASED N plus /P-TYPE SI JUNCTIONS

被引：7

作者：

FERRARI, ED ^{[1
]}

SANZ, FE ^{[1
]}

PEREZ, JMG ^{[1
]}

机构：

[1] UNIV COMPLUTENSE MADRID, FAC CIENCIAS FIS,DEPT OPT, E-28040 MADRID, SPAIN

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.42.11714

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoconduction induced by CO2 laser pulses (10.6-mu-m wavelength) in reverse-biased silicon n+/p-type junctions is experimentally studied. An interpretation on the basis of resonant multiphotonic excitation is discussed. We show that the quasiresonant intermediate states are spatially localized in the highly doped region near the surface of the n+ zone.

引用

页码：11714 / 11717

页数：4

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