EFFECT OF CARRIER GAS ON RESPONSE OF OXIDE SEMICONDUCTOR GAS SENSOR

被引：18

作者：

SRIYUDTHSAK, M

PROMSONG, L

PANYAKEOW, S

机构：

[1] Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1993年 / 13卷 / 1-3期

关键词：

D O I：

10.1016/0925-4005(93)85345-B

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

It is known that response mechanism of an oxide semiconductor gas sensor based on a redox process occurs at the surface of the sensor. The present investigation used an alcohol gas sensor made of tin oxide as an example to demonstrate the role of oxygen molecules in carrier gases on the response of the sensor. It is found that high concentration of oxygen in the carrier gases reduced the sensor recovery time and background conductance, and enhanced its dynamic range and linearity of measurement. These results can be explained by a reaction model of oxidation by oxygen and reduction by reducing gas at the surface of the sensor.

引用

页码：139 / 142

页数：4