TRANSMISSION ELECTRON MICROSCOPY OF FAST-NEUTRON-IRRADIATED SILICON

被引:8
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HEMMENT, PLF
GUNNERSE.EM
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10.1063/1.1782152
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O59 [应用物理学];
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页码:2912 / &
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[1]   ELECTRON MICROSCOPE OBSERVATION OF HIHG-ENERGY-NEUTRON-IRRADIATED GERMANIUM [J].
BERTOLOT.M ;
PAPA, T ;
SETTE, D ;
VITALI, G .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (11) :3506-&
[2]   OBSERVATION OF DAMAGE REGIONS IN N-TYPE GERMANIUM BY MEANS OF A CHEMICAL ETCH [J].
BERTOLOTTI, M ;
SETTE, D ;
VITALI, G ;
GRASSO, V ;
PAPA, T .
NUOVO CIMENTO, 1963, 29 (05) :1200-+
[3]  
CRAWFORD JH, 1959, J APPL PHYS, V30, P1204, DOI 10.1063/1.1735294
[4]  
DUNMUR IW, PRIVATE COMMUNICATIO
[5]   DISORDERED REGIONS IN SEMICONDUCTORS BOMBARDED BY FAST NEUTRONS [J].
GOSSICK, BR .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1214-1218
[6]  
HOLMES PJ, 1962, ELECTROCHEMISTRY ED, V10, P329
[7]   DIRECT OBSERVATION OF NEUTRON DAMAGE IN GERMANIUM [J].
PARSONS, JR ;
BALLUFFI, RW ;
KOEHLER, JS .
APPLIED PHYSICS LETTERS, 1962, 1 (03) :57-58
[8]   MEASUREMENT OF THE RANGE OF RECOIL ATOMS [J].
SCHMITT, RA ;
SHARP, RA .
PHYSICAL REVIEW LETTERS, 1958, 1 (12) :445-447
[9]  
SIRTL E, 1961, Z METALLKD, V52, P529
[10]  
VOOK F, 1965, 7TH P INT C PHYS SEM, V3, P51