共 71 条
[11]
ASPNES DE, 1980, LASER ELECTRON BEAM, P414
[12]
INFRARED ABSORPTION IN HEAVILY DOPED N-TYPE SI
[J].
PHYSICA STATUS SOLIDI,
1969, 31 (01)
:323-+
[13]
Bashara N., 1977, ELLIPSOMETRY POLARIZ
[14]
BAND-GAP NARROWING IN HEAVILY DOPED MANY-VALLEY SEMICONDUCTORS
[J].
PHYSICAL REVIEW B,
1981, 24 (04)
:1971-1986
[15]
ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD
[J].
PHYSICAL REVIEW,
1966, 142 (02)
:530-&
[16]
EFFECT OF TEMPERATURE AND DOPING ON REFLECTIVITY OF GERMANIUM IN FUNDAMENTAL ABSORPTION REGION
[J].
PHYSICAL REVIEW,
1961, 122 (05)
:1382-&
[17]
CARDONA M, 1969, SOLID STATE PHYSIC S, V11
[18]
CARDONA M, 1972, ATOMIC STRUCTURE PRO
[19]
SOLIDS WITH THERMAL OR STATIC DISORDER .2. OPTICAL-PROPERTIES
[J].
PHYSICAL REVIEW B,
1978, 18 (10)
:5225-5235
[20]
NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS
[J].
PHYSICAL REVIEW B,
1976, 14 (02)
:556-582