SEMICONDUCTOR ELECTRODES .45. PHOTOELECTROCHEMISTRY OF N-TYPE AND P-TYPE MOTE2 IN AQUEOUS-SOLUTIONS

[1] SEMICONDUCTOR ELECTRODES .44. PHOTOELECTROCHEMISTRY AT POLYCRYSTALLINE P-TYPE WSE2 FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : 673 - 676

[2] SEMICONDUCTOR ELECTRODES .40. PHOTOASSISTED HYDROGEN EVOLUTION AT POLY(BENZYL VIOLOGEN)-COATED P-TYPE SILICON ELECTRODES [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1981, 103 (23) : 6898 - 6901

[3] INFLUENCE OF CRYSTAL-SURFACE ORIENTATION ON REDOX REACTIONS AT SEMICONDUCTING MOS2 [J]. ELECTROCHIMICA ACTA, 1979, 24 (06) : 705 - 711

[4] IMPROVEMENT OF ENERGY-CONVERSION EFFICIENCY BY SPECIFIC CHEMICAL TREATMENTS OF NORMAL-MOSE2 AND NORMAL-WSE2 PHOTOANODES [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1981, 103 (05) : 1279 - 1281

[5] SEMICONDUCTOR ELECTRODES .29. HIGH-EFFICIENCY PHOTOELECTROCHEMICAL SOLAR-CELLS WITH N-WSE2 ELECTRODES IN AN AQUEOUS IODIDE MEDIUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) : 518 - 520

[6] SEMICONDUCTOR ELECTRODES .36. CHARACTERISTICS OF N-MOSE2, N-WSE2 AND P-WSE2 ELECTRODES IN AQUEOUS-SOLUTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) : 945 - 952

[7] SEMICONDUCTING BEHAVIOR OF SUBSTITUTED TUNGSTEN DISELENIDE AND ITS ANALOGUES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (09) : 1058 - 1065

[8] PHOTOELECTROCHEMICAL REACTIONS AND FORMATION OF INVERSION-LAYERS AT NORMAL-TYPE MOS2-ELECTRODES, MOSE2-ELECTRODES, AND WSE2-ELECTRODES IN APROTIC-SOLVENTS [J]. BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1980, 84 (07): : 645 - 653

[9] KAUTEK W, 1979, BER BUNSEN PHYS CHEM, V83, P1000, DOI 10.1002/bbpc.19790831010

[10] RELATIONSHIP BETWEEN SURFACE-MORPHOLOGY AND SOLAR CONVERSION EFFICIENCY OF WSE2 PHOTOANODES [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (06) : 1877 - 1880

[1] SEMICONDUCTOR ELECTRODES .44. PHOTOELECTROCHEMISTRY AT POLYCRYSTALLINE P-TYPE WSE2 FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : 673 - 676

[2] SEMICONDUCTOR ELECTRODES .40. PHOTOASSISTED HYDROGEN EVOLUTION AT POLY(BENZYL VIOLOGEN)-COATED P-TYPE SILICON ELECTRODES [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1981, 103 (23) : 6898 - 6901

[3] INFLUENCE OF CRYSTAL-SURFACE ORIENTATION ON REDOX REACTIONS AT SEMICONDUCTING MOS2 [J]. ELECTROCHIMICA ACTA, 1979, 24 (06) : 705 - 711

[4] IMPROVEMENT OF ENERGY-CONVERSION EFFICIENCY BY SPECIFIC CHEMICAL TREATMENTS OF NORMAL-MOSE2 AND NORMAL-WSE2 PHOTOANODES [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1981, 103 (05) : 1279 - 1281

[5] SEMICONDUCTOR ELECTRODES .29. HIGH-EFFICIENCY PHOTOELECTROCHEMICAL SOLAR-CELLS WITH N-WSE2 ELECTRODES IN AN AQUEOUS IODIDE MEDIUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) : 518 - 520

[6] SEMICONDUCTOR ELECTRODES .36. CHARACTERISTICS OF N-MOSE2, N-WSE2 AND P-WSE2 ELECTRODES IN AQUEOUS-SOLUTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) : 945 - 952

[7] SEMICONDUCTING BEHAVIOR OF SUBSTITUTED TUNGSTEN DISELENIDE AND ITS ANALOGUES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (09) : 1058 - 1065

[8] PHOTOELECTROCHEMICAL REACTIONS AND FORMATION OF INVERSION-LAYERS AT NORMAL-TYPE MOS2-ELECTRODES, MOSE2-ELECTRODES, AND WSE2-ELECTRODES IN APROTIC-SOLVENTS [J]. BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1980, 84 (07): : 645 - 653

[9] KAUTEK W, 1979, BER BUNSEN PHYS CHEM, V83, P1000, DOI 10.1002/bbpc.19790831010

[10] RELATIONSHIP BETWEEN SURFACE-MORPHOLOGY AND SOLAR CONVERSION EFFICIENCY OF WSE2 PHOTOANODES [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (06) : 1877 - 1880