ISOTHERMAL GAAS LIQUID-PHASE EPITAXY USING A ROTATING SUBSTRATE TECHNIQUE

被引:2
作者
ASTLES, MG [1 ]
BIRBECK, JCH [1 ]
LAVERSUCH, CJ [1 ]
ROWLAND, MC [1 ]
机构
[1] SERV ELECTR RES LAB,BALDOCK,HERTFORDSHIRE,ENGLAND
关键词
D O I
10.1016/0022-0248(76)90258-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:24 / 28
页数:5
相关论文
共 5 条
[1]  
ASTLES MG, 1974, J CRYST GROWTH, V27, P142
[2]   LIQUID-PHASE EPITAXIAL-GROWTH OF MAGNETIC GARNET FILMS BY ISOTHERMAL DIPPING IN A HORIZONTAL PLANE WITH AXIAL ROTATION [J].
GIESS, EA ;
KUPTSIS, JD ;
WHITE, EAD .
JOURNAL OF CRYSTAL GROWTH, 1972, 16 (01) :36-&
[3]   SIMPLE ULTRAHIGH-VACUUM ROTATABLE SEAL [J].
MILLS, JC .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1972, 43 (05) :819-&
[4]   GA-AL-AS - PHASE THERMODYNAMIC AND OPTICAL PROPERTIES [J].
PANISH, MB ;
SUMSKI, S .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (01) :129-&
[5]  
Peters R. C., 1974, Acta Electronica, V17