SUPERLATTICE BUFFERS FOR GAAS POWER MESFETS GROWN BY MBE

被引：32

作者：

SCHAFF, WJ ^{[1
]}

EASTMAN, LF ^{[1
]}

VANREES, B ^{[1
]}

LILES, B ^{[1
]}

机构：

[1] RAYTHEON SPECIAL MICROWAVE DEVICES OPERAT,NORTHBOROUGH,MA 01532

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 02期

关键词：

D O I：

10.1116/1.582801

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：265 / 268

页数：4

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