PROPERTIES OF AMORPHOUS-SILICON NITRIDE PREPARED AT HIGH DEPOSITION RATE

被引：4

作者：

NISHIBAYASHI, Y

IMURA, T

OSAKA, Y

SHIZUMA, K

NISHIYAMA, F

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 06期

关键词：

D O I：

10.1143/JJAP.24.L469

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L469 / L471

页数：3

共 9 条

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[3]

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[6] HYDROGEN CONCENTRATION PROFILES AND CHEMICAL BONDING IN SILICON-NITRIDE [J].

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[7] AMORPHOUS SILICON-SILICON NITRIDE THIN-FILM TRANSISTORS [J].

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[8]

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