FABRICATION OF II-VI SEMICONDUCTOR QUANTUM-WELL STRUCTURES IN ZNCDSSE ALLOY SYSTEMS

被引：6

作者：

FUJITA, S

KAWAKAMI, Y

FUJITA, S

机构：

[1] Department of Electrical Engineering, Kyoto University

来源：

PHYSICA B | 1993年 / 191卷 / 1-2期

关键词：

D O I：

10.1016/0921-4526(93)90178-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An effort is made to investigate the physical parameters of ZnCdSSe semiconductors, towards designing quantum well (QW) laser structures capable of growing coherently on III-V semiconductor substrates and of effectively confining carriers and light. As examples, ZnCdSe/ZnSSe or ZnCdSSe/ZnCdS QWs on GaAs substrates and ZnCdSSe/ZnSSe or ZnCdSSe/ZnCdS QWs on GaP substrates are proposed as promising candidates operating in the blue-green/blue and near-ultraviolet spectral regions, respectively. For ZnCdSe/ZnSSe-based QWs, successful layer-by-layer growth of entire structures under in situ observation of reflection high-energy electron diffraction (RHEED) intensity oscillations and optically pumped laser characteristics strongly support the high potential of this kind of multilayered structures for future optoelectronic device applications.

引用

页码：57 / 70

页数：14

共 58 条

[1] MODEL DIELECTRIC-CONSTANTS OF GAP, GAAS, GASB, INP, INAS, AND INSB [J].