LOW-TEMPERATURE EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE CHARACTERIZATION OF GAN

被引：15

作者：

DISSANAYAKE, A ^{[1
]}

LIN, JY ^{[1
]}

JIANG, HX ^{[1
]}

YU, ZJ ^{[1
]}

EDGAR, JH ^{[1
]}

机构：

[1] KANSAS STATE UNIV AGR & APPL SCI,DEPT CHEM ENGN,MANHATTAN,KS 66506

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 18期

关键词：

D O I：

10.1063/1.112729

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial layers of GaN on sapphire substrates have been grown by metalorganic chemical-vapor deposition at a deposition temperature as low as 400 degrees C, which is the lowest temperature for successful epitaxial growth of GaN by any technique. This is achieved by controlling the low flow rate of the source gases and by first depositing an AIN buffer layer at 400 degrees C. Low-temperature photoluminescence measurements have been employed to study the optical properties of the films deposited at different temperatures. (C) 1994 American Institute of Physics.

引用

页码：2317 / 2319

页数：3

共 17 条

[1]

AKASAKI I, 1994, PROPERTIES GROUP 3 N

[2] INFRARED LUMINESCENCE OF RESIDUAL IRON DEEP-LEVEL ACCEPTORS IN GALLIUM NITRIDE (GAN) EPITAXIAL LAYERS [J].

BAUR, J ;

MAIER, K ;

KUNZER, M ;

KAUFMANN, U ;

SCHNEIDER, J ;

AMANO, H ;

AKASAKI, I ;

DETCHPROHM, T ;

HIRAMATSU, K .

APPLIED PHYSICS LETTERS, 1994, 64 (07) :857-859

[3] HYDROGENATION OF P-TYPE GALLIUM NITRIDE [J].

BRANDT, MS ;

JOHNSON, NM ;

MOLNAR, RJ ;

SINGH, R ;

MOUSTAKAS, TD .

APPLIED PHYSICS LETTERS, 1994, 64 (17) :2264-2266

[4] DONOR-ACCEPTOR PAIR RECOMBINATION IN GAN [J].

DINGLE, R ;

ILEGEMS, M .

SOLID STATE COMMUNICATIONS, 1971, 9 (03) :175-&

[5] HIGH-QUALITY ALXGA1-XN GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING TRIMETHYLAMINE ALANE AS THE ALUMINUM PRECURSOR [J].

KHAN, MA ;

OLSON, DT ;

KUZNIA, JN .

APPLIED PHYSICS LETTERS, 1994, 65 (01) :64-66

[6] HETEROEPITAXY, POLYMORPHISM, AND FAULTING IN GAN THIN-FILMS ON SILICON AND SAPPHIRE SUBSTRATES [J].

LEI, T ;

LUDWIG, KF ;

MOUSTAKAS, TD .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (07) :4430-4437

[7] DX CENTERS IN A10.34GA0.66AS AMORPHOUS THIN-FILMS [J].

LIN, JY ;

DISSANAYAKE, A ;

JIANG, HX .

SOLID STATE COMMUNICATIONS, 1993, 87 (09) :787-790

[8] THERMAL-STABILITY OF GAN INVESTIGATED BY LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTROSCOPY [J].

LIN, ME ;

SVERDLOV, BN ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1993, 63 (26) :3625-3627

[9]

MOUSTAKAS TD, 1992, MAT RES SOC S P, V242

[10] P-GAN/N-INGAN/N-GAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES [J].

NAKAMURA, S ;

SENOH, M ;

MUKAI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (1A-B) :L8-L11

← 1 2 →