OXIDE CHARGE SPACE CORRELATION IN INVERSION-LAYERS .2. 3-DIMENSIONAL OXIDE CHARGE-DISTRIBUTION

被引：14

作者：

GAMIZ, F

LOPEZVILLANUEVA, JA

BANQUERI, J

GHAILAN, Y

CARCELLER, JE

机构：

[1] Dept. de Electron. y Tecnologia de Computadores, Granada Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1995年 / 10卷 / 05期

关键词：

D O I：

10.1088/0268-1242/10/5/004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Coulomb scattering model which includes the effect of the space correlation of oxide charges on the effective mobility of electrons in an NMOS transistor channel has been proposed. A general three-dimensional oxide charge distribution has been considered in this paper. Using this new model in a one-electron Monte Carlo procedure provides the chance of theoretically studying some effects on the electron effective mobility in silicon inversion layers (such as bulk impurity charge, oxide charge distribution profile and charged-centre sign) that cannot be studied with our previous model (1994 J. Appl. Phys. 75 924). These effects have been found to noticeably influence electron effective mobility, which is in agreement with previous experimental results.

引用

页码：592 / 600

页数：9

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