HIGH-ENERGY PHOTOLUMINESCENCE IN LOW TAUC GAP A-C-H-N

被引：41

作者：

DEMICHELIS, F

LIU, YC

RONG, XF

SCHREITER, S

TAGLIAFERRO, A

机构：

[1] Dipartimento di Fisica, Politecnico di Torino, 10129 Torino

来源：

SOLID STATE COMMUNICATIONS | 1995年 / 95卷 / 07期

关键词：

A-C-H-N; PHOTOLUMINESCENCE;

D O I：

10.1016/0038-1098(95)00252-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this letter, the photoluminescence signals in low optical gap (below 2.0 eV) a-C:H:N films were investigated. Films were deposited by r.f. sputtering of a graphite target in Ar-H-2-N-2 atmospheres having different Ar/N-2 flow rate ratios. We have found photoluminescence signals of high intensity and having a peak energy well over 2.0 eV. These results are discussed on the basis of a model in which the sp(2) clusters are considered as luminescence centres. Nitrogenation effect upon the luminescence centres and the luminescence intensity correlation with nitrogen concentration are also discussed, in the light of the presented model.

引用

页码：475 / 477

页数：3

共 13 条

[1] PI-BANDS AND GAP STATES FROM OPTICAL-ABSORPTION AND ELECTRON-SPIN-RESONANCE STUDIES ON AMORPHOUS-CARBON AND AMORPHOUS HYDROGENATED CARBON-FILMS [J].