STRAINED-LAYER INGAASP DIODE-LASERS WITH TAPERED GAIN REGION FOR OPERATION AT LAMBDA=1.3-MU-M

被引：6

作者：

GROVERS, SH

DONNELLY, JP

WALPOLE, JN

WOODHOUSE, JD

MISSAGGIA, LJ

BAILEY, RJ

NAPOLEONE, A

机构：

[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 11期

关键词：

D O I：

10.1109/68.334815

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A report is given of the first high-power InP-based tapered lasers. Continuous output powers of 0.5 W with nearly 80% of the power in the central lobe have been obtained. This is the highest reported brightness of a 1.3 mum source.

引用

页码：1286 / 1288

页数：3

共 9 条

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