CORRELATION-ENERGY OF DEEP LEVEL TRAPS IN A-SI-H

被引:10
作者
BARYAM, Y
JOANNOPOULOS, JD
机构
[1] MIT, Cambridge, MA, USA, MIT, Cambridge, MA, USA
关键词
ACKNOWLEDGEM ENTS This work was supported in part by NSF grant # DMR 84-18715. We thank D. Adler for helpful discussions. One of us (Y.B.) would like to acknowledge support by a Bantrell Post-Doctoral Fellowship;
D O I
10.1016/0022-3093(85)90620-9
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
9
引用
收藏
页码:99 / 102
页数:4
相关论文
共 9 条
[1]   ORIGIN OF THE PHOTOINDUCED CHANGES IN HYDROGENATED AMORPHOUS-SILICON [J].
ADLER, D .
SOLAR CELLS, 1983, 9 (1-2) :133-148
[2]  
ADLER D, 1984, AIP C P, V120, P70
[3]   THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J].
BARAFF, GA ;
KANE, EO ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1980, 21 (12) :5662-5686
[4]  
BERNHOLC J, 1985, J ELECTRON MATER A, V14, P781
[5]   IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J].
COHEN, JD ;
HARBISON, JP ;
WECHT, KW .
PHYSICAL REVIEW LETTERS, 1982, 48 (02) :109-112
[6]   ELECTRON-SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS-SILICON [J].
DERSCH, H ;
STUKE, J ;
BEICHLER, J .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (01) :265-274
[7]   MOMENTUM-SPACE FORMALISM FOR THE TOTAL ENERGY OF SOLIDS [J].
IHM, J ;
ZUNGER, A ;
COHEN, ML .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (21) :4409-4422
[8]   THE CORRELATION-ENERGY OF THE DANGLING SILICON BOND IN A-SI-H [J].
JACKSON, WB .
SOLID STATE COMMUNICATIONS, 1982, 44 (04) :477-480
[9]   METHOD FOR DIRECT DETERMINATION OF THE EFFECTIVE CORRELATION-ENERGY OF DEFECTS IN SEMICONDUCTORS - OPTICAL MODULATION SPECTROSCOPY OF DANGLING BONDS [J].
VARDENY, Z ;
TAUC, J .
PHYSICAL REVIEW LETTERS, 1985, 54 (16) :1844-1847