PLANAR INP/INGAAS AVALANCHE PHOTODIODES WITH PREFERENTIAL LATERAL EXTENDED GUARD RING

被引：14

作者：

TAGUCHI, K

TORIKAI, T

SUGIMOTO, Y

MAKITA, K

ISHIHARA, H

FUJITA, S

MINEMURA, K

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 04期

关键词：

D O I：

10.1109/EDL.1986.26364

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：257 / 258

页数：2

共 8 条

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[5]

SUGIMOTO Y, 1985, P EUR C OPTICAL COMM, P545

[6] REQUIRED DONOR CONCENTRATION OF EPITAXIAL LAYERS FOR EFFICIENT INGAASP AVALANCHE PHOTO-DIODES [J].

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[7]

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[8] HIGH-PURITY INP GROWN BY HYDRIDE VPE TECHNIQUE WITH IMPURITY GETTERING BY INDIUM SOURCE AND OXYGEN [J].

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