STRESS-INDUCED MIXING OF SPIN-ORBIT-SPLIT ACCEPTOR STATES OF SILICON

被引：22

作者：

CHANDRASEKHAR, HR

RAMDAS, AK

RODRIGUEZ, S

机构：

[1] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907

[2] MAX PLANCK INST FESTKORPERFORSCH,STUTTGART,FED REP GER

来源：

PHYSICAL REVIEW B | 1975年 / 12卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.12.5780

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5780 / 5789

页数：10

共 23 条

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RODRIGUE.S .

PHYSICAL REVIEW B, 1973, 8 (08) :3836-3851

[4]

CHANDRASEKHAR HR, 1973, THESIS PURDUE U

[5]

CHANDRASEKHAR HR, UNPUBLISHED

[6] RAMAN-SCATTERING AND PHOTOLUMINESCENCE IN BORON-DOPED AND ARSENIC-DOPED SILICON [J].

CHERLOW, JM ;

AGGARWAL, RL ;

LAX, B .

PHYSICAL REVIEW B, 1973, 7 (10) :4547-4560

[7] CORRECTION [J].

CHERLOW, JM .

PHYSICAL REVIEW B, 1974, 9 (08) :3633-3633

[8]

KLEIN MV, RAMAN SCATTERING SOL

[9] DEFORMATION POTENTIAL IN GERMANIUM FROM OPTICAL ABSORPTION LINES FOR EXCITON FORMATION [J].

KLEINER, WH ;

ROTH, LM .

PHYSICAL REVIEW LETTERS, 1959, 2 (08) :334-336

[10] EFFECTS OF UNIAXIAL STRESS ON INDIRECT EXCITON SPECTRUM OF SILICON [J].

LAUDE, LD ;

POLLAK, FH ;

CARDONA, M .

PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (08) :2623-&

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