TRANSFERRED-ELECTRON PHOTOEMISSION TO 1.4 MU-M

被引：24

作者：

ESCHER, JS ^{[1
]}

SANKARAN, R ^{[1
]}

机构：

[1] VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 02期

关键词：

D O I：

10.1063/1.88977

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：87 / 88

页数：2

相关论文

共 11 条

[1] GLASS-SEALED GAAS-ALGAAS TRANSMISSION PHOTOCATHODE
ANTYPAS, GA
EDGECUMBE, J
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (07) : 371 - 372
[2] GROWTH CHARACTERIZATION OF INP-INGAASP LATTICE-MATCHED HETEROJUNCTIONS
ANTYPAS, GA
MOON, RL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1574 - 1577
[3] TRANSFERRED ELECTRON PHOTOEMISSION FROM INP
BELL, RL
JAMES, LW
MOON, RL
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (11) : 645 - 646
[4] BELL RL, 1975, NEGATIVE ELECTRON AF, V46, P1252
[5] Escher J. S., 1975, Critical Reviews in Solid State Sciences, V5, P577, DOI 10.1080/10408437508243514
[6] CALCULATION OF MINORITY-CARRIER CONFINEMENT PROPERTIES OF III-V SEMICONDUCTOR HETEROJUNCTIONS (APPLIED TO TRANSMISSION-MODE PHOTOCATHODES)
JAMES, LW
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) : 1326 - 1335
[7] APPLICATION OF SEMICONDUCTORS WITH NEGATIVE ELECTRON AFFINITY SURFACES TO ELECTRON-EMISSION DEVICES
MARTINELLI, RU
FISHER, DG
[J]. PROCEEDINGS OF THE IEEE, 1974, 62 (10) : 1339 - 1360
[8] HETEROJUNCTION PHOTOCATHODE CONCEPTS
MILNES, AG
FEUCHT, DL
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (10) : 383 - &
[9] SANKARAN R, TO BE PUBLISHED
[10] SZE SM, 1969, PHYSICS SEMICONDUCTO, P371