TIC SINGLE-CRYSTAL PREPARATION BY FLOATING ZONE TECHNIQUE UNDER LOW AMBIENT GAS-PRESSURE

被引：9

作者：

KUMASHIRO, Y ^{[1
]}

ITOH, A ^{[1
]}

MISAWA, S ^{[1
]}

机构：

[1] ELECTROTECH LAB,TOKYO,JAPAN

来源：

关键词：

D O I：

10.1143/JJAP.15.921

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：921 / 922

页数：2

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ITOH, A ;

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[5] PREPARATION OF CRYSTALLINE REFRACTORY CARBIDES BY ZONE-MELTING [J].

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MURRAY, MJ .

[6]

Precht W., 1968, Journal of Crystal Growth, V3-4Spe, P818, DOI 10.1016/0022-0248(68)90274-1

[7]

Stroms E., 1967, REFRACTORY CARBIDES