OPTICAL-DETECTION OF THE INTEGER AND FRACTIONAL QUANTUM HALL-EFFECTS IN GAAS

被引：222

作者：

TURBERFIELD, AJ ^{[1
]}

HAYNES, SR ^{[1
]}

WRIGHT, PA ^{[1
]}

FORD, RA ^{[1
]}

CLARK, RG ^{[1
]}

RYAN, JF ^{[1
]}

HARRIS, JJ ^{[1
]}

FOXON, CT ^{[1
]}

机构：

[1] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.65.637

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report a definitive optical detection, using band-gap photoluminescence, of the integer and fractional quantum Hall effects in GaAs by a comprehensive study of integer states from =1 to 10 and the =2/3 hierarchy out to the 5/9 daughter state, in an ultrahigh-mobility single heterojunction at 120 mK. © 1990 The American Physical Society.

引用

页码：637 / 640

页数：4

共 13 条

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[10] RESISTANCE FLUCTUATIONS IN NARROW ALGAAS GAAS HETEROSTRUCTURES - DIRECT EVIDENCE OF FRACTIONAL CHARGE IN THE FRACTIONAL QUANTUM HALL-EFFECT
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