ABOVE BARRIER DOUBLETS IN GAAS/ALXGA1-XAS SUPERLATTICES

被引：27

作者：

SONG, JJ

YOON, YS

JUNG, PS

FEDOTOWSKY, A

SCHULMAN, JN

TU, CW

BROWN, JM

HUANG, D

MORKOC, H

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

[3] UNIV ILLINOIS,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 18期

关键词：

D O I：

10.1063/1.97880

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1269 / 1271

页数：3

共 9 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29

[2]

[Anonymous], 1985, SYNTHETIC MODULATED

[3]

BASSANI F, 1975, ELECTRONIC STATES OP, P195

[4]

GOSSARD AC, 1983, THIN FILMS PREPARATI, P13

[5] BAND MIXING IN SEMICONDUCTOR SUPERLATTICES [J].

SCHULMAN, JN ;

CHANG, YC .

PHYSICAL REVIEW B, 1985, 31 (04) :2056-2068

[6]

SCHULMAN JN, 1986, MATER RES SOC S P, V56, P279

[7] BARRIER-WIDTH DEPENDENCE OF OPTICAL-TRANSITIONS INVOLVING UNCONFINED ENERGY-STATES IN GAAS-ALXGA1-XAS SUPERLATTICES [J].

SONG, JJ ;

YOON, YS ;

FEDOTOWSKY, A ;

KIM, YB ;

SCHULMAN, JN ;

TU, CW ;

HUANG, D ;

MORKOC, H .

PHYSICAL REVIEW B, 1986, 34 (12) :8958-8962

[8] CONFINED ELECTRON-STATES IN GAAS-GA1-XALXAS (0.2 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 1.0) SUPERLATTICES [J].

WONG, KB ;

JAROS, M ;

GELL, MA ;

NINNO, D .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (01) :53-65

[9] DELOCALIZED EXCITONS IN SEMICONDUCTOR HETEROSTRUCTURES [J].

ZUCKER, JE ;

PINCZUK, A ;

CHEMLA, DS ;

GOSSARD, A ;

WIEGMANN, W .

PHYSICAL REVIEW B, 1984, 29 (12) :7065-7068

← 1 →