PHOTOELECTROCHEMISTRY OF WSE2 ELECTRODES - COMPARISON OF STEPPED AND SMOOTH SURFACES

[1] THE TRANSPORT AND KINETICS OF MINORITY-CARRIERS IN ILLUMINATED SEMICONDUCTOR ELECTRODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) : 1492 - 1501

[2] Evans, 1976, CHEMICAL MUTAGENS PR, P1, DOI 10.1007/978-1-4684-0892-8_1

[3] COMPETITION BETWEEN PHOTOCORROSION AND PHOTO-OXIDATION OF REDOX SYSTEMS AT N-TYPE SEMICONDUCTOR ELECTRODES [J]. BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1983, 87 (02): : 123 - 128

[4] ELECTROCHEMICAL SOLAR-CELL BASED ON THE D-BAND SEMICONDUCTOR TUNGSTEN-DISELENIDE [J]. BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1978, 82 (12): : 1331 - 1335

[5] FORMATION OF AN INVERSION LAYER IN N-TYPE MOSE2 ELECTRODES - OBSERVATION IN THE PRESENCE OF HIGHLY OXIDIZING REDOX SYSTEMS [J]. BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1982, 86 (01): : 20 - 25

[6] ANISOTROPIC PHOTOCORROSION OF N-TYPE MOS2, MOSE2, AND WSE2 SINGLE-CRYSTAL SURFACES - THE ROLE OF CLEAVAGE STEPS, LINE AND SCREW DISLOCATIONS [J]. SURFACE SCIENCE, 1982, 119 (01) : 46 - 60

[7] THE PHOTOELECTROCHEMISTRY OF THE AQUEOUS IODIDE IODINE REDOX SYSTEM AT N-TYPE MOSE2-ELECTRODES [J]. ELECTROCHIMICA ACTA, 1981, 26 (12) : 1771 - 1778

[8] KAUTEK W, 1979, BER BUNSEN PHYS CHEM, V83, P1000, DOI 10.1002/bbpc.19790831010

[9] RELATIONSHIP BETWEEN SURFACE-MORPHOLOGY AND SOLAR CONVERSION EFFICIENCY OF WSE2 PHOTOANODES [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (06) : 1877 - 1880

[10] CHARGE COLLECTION MICROSCOPY ON P-WSE2 - RECOMBINATION SITES AND MINORITY-CARRIER DIFFUSION LENGTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 418 - 423

[1] THE TRANSPORT AND KINETICS OF MINORITY-CARRIERS IN ILLUMINATED SEMICONDUCTOR ELECTRODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) : 1492 - 1501

[2] Evans, 1976, CHEMICAL MUTAGENS PR, P1, DOI 10.1007/978-1-4684-0892-8_1

[3] COMPETITION BETWEEN PHOTOCORROSION AND PHOTO-OXIDATION OF REDOX SYSTEMS AT N-TYPE SEMICONDUCTOR ELECTRODES [J]. BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1983, 87 (02): : 123 - 128

[4] ELECTROCHEMICAL SOLAR-CELL BASED ON THE D-BAND SEMICONDUCTOR TUNGSTEN-DISELENIDE [J]. BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1978, 82 (12): : 1331 - 1335

[5] FORMATION OF AN INVERSION LAYER IN N-TYPE MOSE2 ELECTRODES - OBSERVATION IN THE PRESENCE OF HIGHLY OXIDIZING REDOX SYSTEMS [J]. BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1982, 86 (01): : 20 - 25

[6] ANISOTROPIC PHOTOCORROSION OF N-TYPE MOS2, MOSE2, AND WSE2 SINGLE-CRYSTAL SURFACES - THE ROLE OF CLEAVAGE STEPS, LINE AND SCREW DISLOCATIONS [J]. SURFACE SCIENCE, 1982, 119 (01) : 46 - 60

[7] THE PHOTOELECTROCHEMISTRY OF THE AQUEOUS IODIDE IODINE REDOX SYSTEM AT N-TYPE MOSE2-ELECTRODES [J]. ELECTROCHIMICA ACTA, 1981, 26 (12) : 1771 - 1778

[8] KAUTEK W, 1979, BER BUNSEN PHYS CHEM, V83, P1000, DOI 10.1002/bbpc.19790831010

[9] RELATIONSHIP BETWEEN SURFACE-MORPHOLOGY AND SOLAR CONVERSION EFFICIENCY OF WSE2 PHOTOANODES [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (06) : 1877 - 1880

[10] CHARGE COLLECTION MICROSCOPY ON P-WSE2 - RECOMBINATION SITES AND MINORITY-CARRIER DIFFUSION LENGTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 418 - 423