ANALYTICAL DESCRIPTION OF BACKSCATTERED ELECTRON SIGNAL FOR HIGH-RESOLUTION METROLOGY

被引：7

作者：

DIFABRIZIO, E ^{[1
]}

LUCIANI, L ^{[1
]}

GRELLA, L ^{[1
]}

BACIOCCHI, M ^{[1
]}

GENTILI, M ^{[1
]}

MASTROGIACOMO, L ^{[1
]}

MAGGIORA, R ^{[1
]}

WHITE, V ^{[1
]}

机构：

[1] UNIV WISCONSIN,CTR XRAY LITHOG,STOUGHTON,WI 53589

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 06期

关键词：

D O I：

10.1116/1.586017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Backscattered electron (BE) signals obtained by scanning fine features with a focused electron beam were studied. A commercial electron beam lithography machine (EBMF10 of Leica Cambridge) equipped with a channel plate detector was exploited for this purpose. The collected signal profile, and in particular the effect of the electron emission from the sidewalls of the feature under inspection (sidewall electrons, SWE) were studied. The variables we investigated include feature material and beam accelerating voltage. The effect of SWE on the BE signal was clarified by making use of Monte Carlo simulations. In particular it was possible to separate the SWE contribution from the global BE signal. Further, a novel analytical representation of the BE signal including the SWE effect was implemented. By this method, a precise linewidth measurement routine was developed and applied for metrology at different voltages on fine metal features of different materials. The application of this method to the metrology of submicron features (down to 0.2 mum) showed an intrinsic accuracy of better than 5% of the actual linewidth value.

引用

页码：2643 / 2647

页数：5

共 8 条

[1] CRITICAL DIMENSION CONTROL OF HIGH-RESOLUTION METAL STRUCTURES BY BACKSCATTERED ELECTRONS [J].