HIGH-TEMPERATURE OPERATION OF 1.3 MU-M GAINASP/INP GRINSCH STRAINED-LAYER QUANTUM-WELL LASERS

被引：28

作者：

NAMEGAYA, T

KASUKAWA, A

IWAI, N

KIKUTA, T

机构：

[1] Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., Yokohama 220, 2-4-3, Okano, Nishi-ku

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 04期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19930263

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The well number of 1.3 mum GaInAsP/InP strained-layer GRINSCH quantum well lasers has been experimentally investigated in terms of the temperature dependence of the threshold current. A very high CW operating temperature of 170-degrees-C with a threshold current of 46.2 mA was obtained for an HR coated laser with eight wells.

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页码：392 / 393

页数：2

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