UNIFIED MODEL OF DAMAGE ANNEALING IN CMOS, FROM FREEZE-IN TO TRANSIENT ANNEALING

被引：36

作者：

SANDER, HH ^{[1
]}

GREGORY, BL ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

关键词：

D O I：

10.1109/TNS.1975.4328097

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2157 / 2162

页数：6

共 12 条

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DERBENWICK, GF
GREGORY, BL
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2151 - 2156
[3] DESIGN OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS
FOSSUM, JG
DERBENWICK, GF
GREGORY, BL
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2208 - 2213
[4] HABING DH, 1973, IEEE T NUCL SCI, V20
[5] HARARI E, 1975, J APP PHYS, V46
[6] HOLE TRANSPORT IN MOS OXIDES
HUGHES, RC
EERNISSE, EP
STEIN, HJ
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2227 - 2233
[7] HUGHES RC, 1975, APPLIED PHYSICS LETT, V26
[8] NIELSEN RL, 1973, IEEE T NUCL SCI, V20
[9] SHARE S, 1974, J APPL PHYS, V45
[10] SIMONS M, 1974, IEEE T NUCL SCI, V21