DEPTH PROFILE DETECTION LIMIT OF 3X10(15) ATOM CM-3 FOR AS IN SI USING CS+ BOMBARDMENT NEGATIVE SECONDARY ION MASS-SPECTROMETRY

被引:46
作者
WILLIAMS, P
EVANS, CA
机构
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[2] UNIV ILLINOIS,SCH CHEM SCI,URBANA,IL 61801
关键词
D O I
10.1063/1.89259
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:559 / 561
页数:3
相关论文
共 7 条
[1]  
GIBBONS JF, 1975, PROJECTED RANGE STAT
[2]  
Hotop H., 1975, Journal of Physical and Chemical Reference Data, V4, P539, DOI 10.1063/1.555524
[3]  
IWAKI M, 1973, ION IMPLANTATION SEM, P111
[4]  
MCHUGH JA, 1975, NBS427 US SPEC PUBL, P129
[5]   ENHANCED DIFFUSION DURING IMPLANTATION OF ARSENIC IN SILICON [J].
SCHWETTMANN, FN .
APPLIED PHYSICS LETTERS, 1973, 22 (11) :570-572
[6]  
TSAI JCC, 1973, ION IMPLANTATION SEM, P87
[7]  
WILLIAMS PC, UNPUBLISHED