OBSERVATION OF QUASI-BOUND STATES IN SEMICONDUCTOR SINGLE QUANTUM BARRIERS

被引：44

作者：

LUO, H ^{[1
]}

DAI, N ^{[1
]}

ZHANG, FC ^{[1
]}

SAMARTH, N ^{[1
]}

DOBROWOLSKA, M ^{[1
]}

FURDYNA, JK ^{[1
]}

PARKS, C ^{[1
]}

RAMDAS, AK ^{[1
]}

机构：

[1] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 70卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.70.1307

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the observation of quasibound states in single semiconductor barriers, in heterostructures with both type-I and type-II band alignments. We discuss the localization and the shape of wave functions of such states, as well as their density of states. In structures with type-II band alignment (CdSe/ZnTe and CdMnSe/ZnTe) we observe transitions involving electrons confined in the conduction band well and quasibound holes localized in the valence band barrier (both in the CdSe layer). In the system with type-I band alignment (ZnMnSe/ZnSe), transitions between states quasibound in the single ZnMnSe barrier also show clear absorption peaks.

引用

页码：1307 / 1310

页数：4

共 13 条

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