EXPONENTIAL ABSORPTION EDGES IN GESE

被引：17

作者：

VLACHOS, SV ^{[1
]}

LAMBROS, AP ^{[1
]}

ECONOMOU, NA ^{[1
]}

机构：

[1] UNIV SALONIKA,DEPT PHYS,SALONIKA,GREECE

来源：

SOLID STATE COMMUNICATIONS | 1976年 / 19卷 / 08期

关键词：

D O I：

10.1016/0038-1098(76)90913-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：759 / 763

页数：5

共 11 条

[1]

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[2] ELECTRICAL PROPERTIES OF GERMANIUM SELENIDE GESE [J].

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OKAZAKI, A .

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[3]

BRADA V, 1975, SOLID STATE COMMUN, V17, P193

[4] OPTICAL-ABSORPTION EDGE IN SNS [J].

LAMBROS, AP ;

GERALEAS, D ;

ECONOMOU, NA .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1974, 35 (04) :537-541

[5]

LAMBROS AP, 1973, SCI ANN FAC PHYS MAT, V13, P85

[6] THE CRYSTAL STRUCTURE OF GERMANIUM SELENIDE GESE [J].

OKAZAKI, A .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1958, 13 (10) :1151-1155

[7] OPTICAL ABSORPTION EDGE OF TRIGONAL SELENIUM [J].

ROBERTS, GG ;

TUTIHASI, S ;

KEEZER, RC .

PHYSICAL REVIEW, 1968, 166 (03) :637-&

[8] POLAR OPTICAL PHONONS AND DIELECTRIC-DISPERSION OF GESE CRYSTALS [J].

SIAPKAS, DI ;

KYRIAKOS, DS ;

ECONOMOU, NA .

SOLID STATE COMMUNICATIONS, 1976, 19 (08) :765-769

[9]

SUMI H, 1971, J PHYS SOC JAPAN, P31

[10]

VLACHOS SV, TO BE PUBLISHED

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