HIGH-FIELD ELECTRON-TRANSPORT IN A-SI-H

被引：8

作者：

IMAO, S

NAKAJIMA, S

NAKATA, J

HATTORI, R

SHIRAFUJI, J

INUISHI, Y

机构：

[1] OSAKA UNIV, SUITA, OSAKA 565, JAPAN

[2] OSAKA UNIV, FAC ENGN, DEPT ELECT ENGN, SUITA, OSAKA 565, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 7B期

关键词：

A-SI-H; HIGH-FIELD TRANSPORT; HOT ELECTRON; DISPERSIVE TRANSPORT; TIME OF FLIGHT (TOF);

D O I：

10.1143/JJAP.30.L1227

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-electric-field electron transport in a-Si:H films has been investigated by means of time-of-flight (TOF) measurements. The drift mobility increased with increasing applied field at lower temperature (less-than-or-equal-to 300 K), accompanied by a simultaneous increase in the dispersion parameter resulting in nondispersive transport. The mobility was much less field-dependent at higher temperature where the nondispersive transport was attained. The experimental results are consistently explained by taking account of the increase in electron temperature (hot electron) at higher field into the theory of dispersive transport.

引用

页码：L1227 / L1230

页数：4

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