2-ELECTRON SEMICONDUCTOR GATE

被引：9

作者：

KIRA, M ^{[1
]}

TITTONEN, I ^{[1
]}

STENHOLM, S ^{[1
]}

机构：

[1] ACAD FINLAND,HELSINKI,FINLAND

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.52.10972

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the behavior of a semiconductor model gate that operates on two electrons. The current output on one side of the barrier structure is steered by varying the delay time between the two electrons injected. Utilizing a supercomputer, we are able to integrate the time-dependent Schrodinger equation and extract the performance of the gate. The operation depends in an essential way on the electron-electron interaction, and the effect of quantum statistics can be evaluated. Thus we can, in this simple model system, investigate two of the main features occurring in all many-electron problems. Semiconductor manufacturing technology may even make the experimental realization of the two-electron device feasible.

引用

页码：10972 / 10978

页数：7

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