GROWTH OF GAAS ON GAAS-COATED SI BY LIQUID-PHASE EPITAXY

被引：27

作者：

SAKAI, S ^{[1
]}

MATYI, RJ ^{[1
]}

SHICHIJO, H ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 04期

关键词：

D O I：

10.1063/1.340010

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1075 / 1079

页数：5

共 8 条

[1] EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES [J].

CHOI, C ;

OTSUKA, N ;

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ZHANG, SL ;

LEVI, D ;

KLEIN, MV .

APPLIED PHYSICS LETTERS, 1987, 50 (15) :992-994

[2] DISLOCATION REDUCTION IN EPITAXIAL GAAS ON SI (100) [J].

FISCHER, R ;

NEUMAN, D ;

ZABEL, H ;

MORKOC, H ;

CHOI, C ;

OTSUKA, N .

APPLIED PHYSICS LETTERS, 1986, 48 (18) :1223-1225

[3]

GROVE AS, 1967, PHYSICS TECHNOLOGY S, P10

[4] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J].

LEE, JW ;

SHICHIJO, H ;

TSAI, HL ;

MATYI, RJ .

APPLIED PHYSICS LETTERS, 1987, 50 (01) :31-33

[5] MICROSTRUCTURAL CHARACTERIZATION OF PATTERNED GALLIUM-ARSENIDE GROWN ON (001) SILICON SUBSTRATES [J].

MATYI, RJ ;

SHICHIJO, H ;

MOORE, TM ;

TSAI, HL .

APPLIED PHYSICS LETTERS, 1987, 51 (01) :18-20

[6] SELECTIVE LIQUID-PHASE EPITAXY AND DEFECT REDUCTION IN GAAS GROWN ON GAAS-COATED SILICON BY MOLECULAR-BEAM EPITAXY [J].

SAKAI, S ;

MATYI, RJ ;

SHICHIJO, H .

APPLIED PHYSICS LETTERS, 1987, 51 (23) :1913-1915

[7] MOCVD GROWTH OF GAAS ON SI SUBSTRATES WITH ALGAP AND STRAINED SUPERLATTICE LAYERS [J].

SOGA, T ;

HATTORI, S ;

SAKAI, S ;

TAKEYASU, M ;

UMENO, M .

ELECTRONICS LETTERS, 1984, 20 (22) :916-918

[8] DEGRADATION OF GAAS-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SI SUBSTRATES [J].

VANDERZIEL, JP ;

DUPUIS, RD ;

LOGAN, RA ;

PINZONE, CJ .

APPLIED PHYSICS LETTERS, 1987, 51 (02) :89-91

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