A CURRENT-CONTROLLED NEGATIVE-RESISTANCE EFFECT IN INDIUM ANTIMONIDE

被引：4

作者：

EASTMAN, LF

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1966年 / ED13卷 / 01期

关键词：

D O I：

10.1109/T-ED.1966.15644

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：117 / +

页数：1

相关论文

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[1] SOME OBSERVATIONS OF GROWING OSCILLATIONS IN ELECTRON-HOLE PLASMA
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[2] A DOUBLE INJECTION NEGATIVE RESISTANCE IN P-TYPE INDIUM ANTIMONIDE AT 77 DEGREES K
ANDO, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1964, 3 (12) : 757 - &
[3] A NEW NEGATIVE RESISTANCE EFFECT IN INDIUM ANTIMONIDE
EASTMAN, LF
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (07): : 761 - &
[4] MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS
GUNN, JB
[J]. SOLID STATE COMMUNICATIONS, 1963, 1 (04) : 88 - 91
[5] LARRABEE RD, 1965, 7 P INT C PHYS SEM