NORMAL-TYPE VS PARA-TYPE SEMICONDUCTION AT HIGH-TEMPERATURES IN OXIDE SUPERCONDUCTORS

被引:17
作者
SU, MY [1 ]
ELSBERND, CE [1 ]
MASON, TO [1 ]
机构
[1] TECHNOL INST,MAT RES CTR,EVANSTON,IL 60208
来源
PHYSICA C | 1989年 / 160卷 / 02期
关键词
D O I
10.1016/0921-4534(89)90178-0
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:114 / 118
页数:5
相关论文
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