ENHANCEMENT OF ELECTRIC FIELD-INDUCED REFRACTIVE-INDEX VARIATION IN A (GAINASP) (INAS)/INP ASYMMETRIC MULTIPLE-QUANTUM-FILM (MQF) STRUCTURE

被引：7

作者：

SUZAKI, Y

ARAI, S

BABA, S

KOHTOKU, M

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 12期

关键词：

D O I：

10.1109/68.118018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An enhancement of an electric field-induced refractive-index variation due to the quantum confined Stark effect was theoretically found in a GaInAsP-InAs/InP asymmetric quantum-film structure especially in low electric-field regime. Almost two times higher sensitivity was experimentally confirmed in a 40-period GaInAsP (8 nm)-InAs (0.3-0.6 nm)/InP (8 nm) asymmetric multiple quantum-film (MQF) structure in comparison with a symmetric one without InAs layer at an applied electric field less than 6 V/mu-m.

引用

页码：1110 / 1112

页数：3

共 12 条

[1]

AIZAWA T, 1991, IEEE PHOTON TECHNOL

[2] GAIN AND INTERVALENCE BAND ABSORPTION IN QUANTUM-WELL LASERS [J].