A SILICON STRIP DETECTOR WITH 12-MU-M RESOLUTION

被引：4

作者：

ENGLAND, JBA ^{[1
]}

HYAMS, BD ^{[1
]}

HUBBELING, L ^{[1
]}

VERMEULEN, JC ^{[1
]}

WEILHAMMER, P ^{[1
]}

机构：

[1] CERN,CH-1211 GENEVA 23,SWITZERLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1982年 / 196卷 / 01期

关键词：

D O I：

10.1016/0029-554X(82)90630-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：149 / 151

页数：3

共 3 条

[1] NEW TYPE OF NON-INJECTING BACT CONTACT FOR TOTALLY DEPLETED SILICON SURFACE BARRIER DETECTORS
ENGLAND, JBA
HAMMER, VW
[J]. NUCLEAR INSTRUMENTS & METHODS, 1971, 96 (01): : 81 - &
[2] CAPACITATIVE CHARGE DIVISION READOUT WITH A SILICON STRIP DETECTOR
ENGLAND, JBA
HYAMS, BD
HUBBELING, L
VERMEULEN, JC
WEILHAMMER, P
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1981, 185 (1-3): : 43 - 47
[3] A SILICON SURFACE-BARRIER MICROSTRIP DETECTOR DESIGNED FOR HIGH-ENERGY PHYSICS
HEIJNE, EHM
HUBBELING, L
HYAMS, BD
JARRON, P
LAZEYRAS, P
PIUZ, F
VERMEULEN, JC
WYLIE, A
[J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 178 (2-3): : 331 - 343