SIMULATION ASSISTED DESIGN OF PROCESSES FOR GRAY-TONE LITHOGRAPHY

被引：9

作者：

HENKE, W

HOPPE, W

QUENZER, HJ

STAUDTFISCHBACH, P

WAGNER, B

机构：

[1] Fraunhofer-Institute for Silicon Technology (ISiT), D-14199 Berlin

[2] SIGMA-C GmbH, D85521 Ottobrunn

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 27卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(94)00104-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on a study of a methodology for fabrication of arbitrarily shaped silicon structures using standard IC manufacturing processes. Particular emphasis is put on the design of halftone transmission masks for the lighography step required in the fabrication process of mechanical, optical or electronics components. The design and experimental investigation of gray-tone masks was supported by lithography simulation. Results are presented for simulated gray-tone patterns as well as experimental trials.

引用

页码：267 / 270

页数：4

共 9 条

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