SOURCES OF SIMOX BURIED OXIDE LEAKAGE

被引：3

作者：

ANC, MJ

KRULL, WA

机构：

[1] Ibis Technology Corporation, Danvers

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 28卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(95)00085-M

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Various sources of degradation of the buried oxide integrity in SIMOX are discussed. Impact of non-particle sources of BOX leakage on the electrical characteristics of buried oxide is shown.

引用

页码：407 / 410

页数：4

共 7 条

[1] Revesz, Et al., Bulk Electrical Conduction in the Buried Oxide of SIMOX Structures, Journal of The Electrochemical Society, 140, 11, (1993)
[2] Boesh, Et al., IEEE Trans. Nucl. Sci., 40, 6, (1993)
[3] Stahlbush, Et al., Electron and hole trapping in irradiated SIMOX, ZMR and BESOI buried oxides, IEEE Transactions on Nuclear Science, 39, 6, (1992)
[4] Stoemenos, Et al., Proc of the ECS Conf. San Francisco, 11-94, pp. 16-27, (1987)
[5] Buller, Krull, Lake, 1987 IEEE Int. SOI Conf. Proc., (1987)
[6] Anc, Et al., 1993 IEEE Int. SOI Conf. Proc., (1993)
[7] Anc, Krull, 1994 IEEE Int. SOI Conf. Proc., (1994)

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