HETEROJUNCTIONS BY ALLOYING

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] GERMANIUM-GALLIUM ARSENIDE HETEROJUNCTIONS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 283 - 287

[3] BEALE JRA, PRIVATE COMMUNICATIO

[4] ALLOYS FOR GAAS DEVICES [J]. SOLID-STATE ELECTRONICS, 1964, 7 (02) : 177 - &

[5] DIEMER G, 1960, PHILIPS RES REP, V15, P368

[6] FANG FF, 1963, P IEEE, V51, P860

[7] FOYT AG, 1963, P IEEE, V51, P852

[8] POWER RECTIFIERS AND TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1512 - 1518

[9] KEYES RJ, 1962, P IRE, V50, P1822

[10] THE PREPARATION AND PROPERTIES OF VAPOR-GROWN GAAS-GAP ALLOYS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (09) : 991 - 995

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] GERMANIUM-GALLIUM ARSENIDE HETEROJUNCTIONS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 283 - 287

[3] BEALE JRA, PRIVATE COMMUNICATIO

[4] ALLOYS FOR GAAS DEVICES [J]. SOLID-STATE ELECTRONICS, 1964, 7 (02) : 177 - &

[5] DIEMER G, 1960, PHILIPS RES REP, V15, P368

[6] FANG FF, 1963, P IEEE, V51, P860

[7] FOYT AG, 1963, P IEEE, V51, P852

[8] POWER RECTIFIERS AND TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1512 - 1518

[9] KEYES RJ, 1962, P IRE, V50, P1822

[10] THE PREPARATION AND PROPERTIES OF VAPOR-GROWN GAAS-GAP ALLOYS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (09) : 991 - 995