ZNO FIELD-EFFECT TRANSISTOR

被引：42

作者：

BOESEN, GF

JACOBS, JE

机构：

[1] Dept. of Elec. Engrg., Northwestern University, Evanston

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 11期

关键词：

D O I：

10.1109/PROC.1968.6813

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fabrication of experimental insulated-gate field-effect transistors On single crystal ZnO is described. Measured transconductance of 10 µmhos is two orders of magnitude smaller than that predicted for this structure by the Hall mobility of 220 cm2/V . s. Threshold voltage indicates relatively large values of surface states and/or insulator charge. Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：2094 / &

共 6 条

[1] ELECTROELASTIC PROPERTIES OF SULFIDES, SELENIDES, AND TELLURIDES OF ZINC AND CADMIUM [J].