EXCITON DYNAMICS IN GAAS ALGAAS MULTIPLE QUANTUM-WELL STRUCTURES

被引：10

作者：

OBERHAUSER, D

KALT, H

SCHLAPP, W

NICKEL, H

KLINGSHIRN, C

机构：

[1] FORSCHUNGSINST DEUTSCH BUNDESPOST, W-6100 DARMSTADT, GERMANY

[2] MAX PLANCK INST FESTKORPERFORSCH, W-7000 STUTTGART 80, GERMANY

来源：

JOURNAL OF LUMINESCENCE | 1991年 / 48-9卷

关键词：

D O I：

10.1016/0022-2313(91)90226-L

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The negligible interface roughness in our GaAs/AlGaAs multiple quantum well structure (MQW) makes it possible to observe the luminescence of free heavy hole excitons. We get detailed information about relaxation and recombination processes of excitons in a MQW by the observation of the luminescence decay of free and donor-bound excitons with picosecond time resolution. Distinct deviations from an exponential decay can be attributed to the saturation of deep impurity levels, a slow cooling rate of the excitons and a delayed thermalization between various free and donor-bound exciton states.

引用

页码：717 / 720

页数：4

共 7 条

[1] OBSERVATION OF ONE MONOLAYER SIZE FLUCTUATIONS IN A GAAS/GAALAS SUPERLATTICE [J].