PROBING SEMICONDUCTOR INTERFACES USING NONLINEAR-OPTICAL SPECTROSCOPY

被引：20

作者：

MCGILP, JF

CAVANAGH, M

POWER, JR

OMAHONY, JD

机构：

来源：

OPTICAL ENGINEERING | 1994年 / 33卷 / 12期

关键词：

2ND HARMONIC GENERATION; INTERFACES; SEMICONDUCTORS; SILICON; POROUS SILICON; ANTIMONY; SPECTROSCOPY;

D O I：

10.1117/12.186373

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The nonlinear optical response of semiconductor interfaces using three-wave mixing experiments in general, and second harmonic generation (SHG) in particular, has been widely studied, but it is only recently, with the advent of commercial tunable pulsed laser sources, that the spectroscopic aspect of SHG can be more readily exploited. Results from porous Si and Si(100)-Sb are reported that illustrate the potential of spectroscopic SHG as a probe of semiconductor interfaces.

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页码：3895 / 3900

页数：6

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