SILICON DAMAGE CAUSED BY HYDROGEN CONTAINING PLASMAS

[1] August Herbert Heinecke R, 1976, US Patent, Patent No. 3940506

[2] CHU WK, 1977, ION IMPLANTATION SEM

[3] Chu WK., 1978, BACKSCATTERING SPECT

[4] INSITU AUGER-ELECTRON SPECTROSCOPY OF SI AND SIO2 SURFACES PLASMA ETCHED IN CF4-H2 GLOW-DISCHARGES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5210 - 5213

[5] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09): : 1062 - &

[6] KERN W, 1970, RCA REV, V31, P187

[7] KUROSAWA K, 1980, 2ND P S DRY PROC, P43

[8] MONTILLO FJ, 1981, ELECTROCHEMICAL SOC, P681

[9] MONTILLO FJ, 1981, 6TH S SOL STAT DEV T

[10] ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30

[1] August Herbert Heinecke R, 1976, US Patent, Patent No. 3940506

[2] CHU WK, 1977, ION IMPLANTATION SEM

[3] Chu WK., 1978, BACKSCATTERING SPECT

[4] INSITU AUGER-ELECTRON SPECTROSCOPY OF SI AND SIO2 SURFACES PLASMA ETCHED IN CF4-H2 GLOW-DISCHARGES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5210 - 5213

[5] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09): : 1062 - &

[6] KERN W, 1970, RCA REV, V31, P187

[7] KUROSAWA K, 1980, 2ND P S DRY PROC, P43

[8] MONTILLO FJ, 1981, ELECTROCHEMICAL SOC, P681

[9] MONTILLO FJ, 1981, 6TH S SOL STAT DEV T

[10] ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30