IMPROVEMENTS IN THE MODULATION AMPLITUDE OF SUB-MICRON GRATINGS PRODUCED IN N-INP BY DIRECT PHOTOELECTROCHEMICAL ETCHING

被引：18

作者：

LUM, RM

OSTERMAYER, FW

KOHL, PA

GLASS, AM

BALLMAN, AA

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 03期

关键词：

D O I：

10.1063/1.96187

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：269 / 271

页数：3

共 17 条

[1]

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[7]

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[8]

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[9] HOLOGRAPHIC PHOTOELECTROCHEMICAL ETCHING OF DIFFRACTION GRATINGS IN N-INP AND N-GALNASP FOR DISTRIBUTED FEEDBACK LASERS [J].

LUM, RM ;

GLASS, AM ;

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BALLMAN, AA ;

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JOURNAL OF APPLIED PHYSICS, 1985, 57 (01) :39-44

[10] PREVENTION OF SURFACE CORRUGATION THERMAL DEFORMATION FOR INGAASP/INP DFB LASERS [J].

NAGAI, H ;

NOGUCHI, Y ;

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (05) :L291-L293

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