FAR-INFRARED LIGHT GENERATION AT SEMICONDUCTOR SURFACES AND ITS SPECTROSCOPIC APPLICATIONS

被引：79

作者：

GREENE, BI

SAETA, PN

DYKAAR, DR

SCHMITTRINK, S

CHUANG, SL

机构：

[1] UNIV MARBURG, DEPT PHYS, W-3550 MARBURG, GERMANY

[2] UNIV MARBURG, CTR MAT SCI, W-3550 MARBURG, GERMANY

[3] UNIV ILLINOIS, DEPT ELECT & COMP ENGN, URBANA, IL 61801 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1992年 / 28卷 / 10期

关键词：

D O I：

10.1109/3.159537

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Femtosecond pulses of far-infrared (FIR) radiation can be generated in the depletion field near semiconductor surfaces under optical excitation via the inverse Franz-Keldysh effect or electric-field-induced optical rectification. This coherent mechanism differs from previously proposed incoherent mechanisms and is expected to dominate for nonresonant excitation as well as for resonant excitation with optical fields. Two femtosecond time-resolved spectroscopic applications using a visible excitation pulse and a FIR probe pulse are described.

引用

页码：2302 / 2312

页数：11

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