BORON-NITRIDE THIN-FILMS ON SI(100) BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

被引:6
作者
DEVI, GS [1 ]
ROY, S [1 ]
RAO, VJ [1 ]
机构
[1] INDIAN INST CHEM TECHNOL,DIV INORGAN & PHYS CHEM,THIN FILMS LAB,HYDERABAD 500007,INDIA
关键词
D O I
10.1016/0038-1098(93)90538-X
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Crystalline boron nitride thin films have been deposited on silicon substrates by MO-CVD at different temperatures using a single source III-V precursor in N2 ambient. The deposited films are characterized by XRD and IR techniques. XRD confirms that the films are mostly polycrystalline with (111), (200), (004), (103) oriented cubic and hexagonal phases of boron nitride. IR also shows a mixture of cubic and nexagonal boron nitride phases.
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页码:67 / 70
页数:4
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