HIGH-RATE AND HIGHLY SELECTIVE SIO2 ETCHING EMPLOYING INDUCTIVELY-COUPLED PLASMA AND DISCUSSION ON REACTION-KINETICS

被引：47

作者：

HORIIKE, Y

KUBOTA, K

SHINDO, H

FUKASAWA, T

机构：

[1] HIROSHIMA UNIV,DEPT ELECT ENGN,HIGASHIHIROSHIMA 724,JAPAN

[2] FUKUYAMA UNIV,FAC ENGN,FUKUYAMA,HIROSHIMA 72902,JAPAN

[3] TOKYO ELECTRON YAMANASHI LTD,DEPT DEV ENGN 2,YAMANASHI 407,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1995年 / 13卷 / 03期

关键词：

D O I：

10.1116/1.579831

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：801 / 809

页数：9

共 19 条

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[10] EFFECT OF MAGNETIC-FIELD TO ETCHING CHARACTERISTICS OF INDUCTIVELY-COUPLED PLASMA [J].

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